Manufacturing method of semiconductor memory device

ABSTRACT

A semiconductor memory device includes a substrate, an isolation layer, a trench, a semiconductor active structure, and a floating gate electrode. The isolation layer is disposed on the substrate. The trench penetrates through the isolation layer and exposes a part of the substrate. The semiconductor active structure is disposed in the trench, and the floating gate electrode is disposed on the semiconductor active structure. A manufacturing method of the semiconductor memory device includes the following steps. The isolation layer is formed on the substrate. The trench is formed penetrating through the isolation layer and exposing a part of the substrate. The semiconductor active structure is formed in the trench. The floating gate electrode is formed on the semiconductor active structure.

Cross Reference To Related Applications

This application is a division of U.S. application No. 17/005,285, filedon Aug. 27, 2020. The content of the application is incorporated hereinby reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to a semiconductor memory device and amanufacturing method thereof, and more particularly, to a semiconductormemory device including a semiconductor active structure disposed in atrench and a manufacturing method thereof.

2. Description of the Prior Art

Semiconductor memory devices are used in computer and electronicsindustries as a means for retaining digital information or data.Typically, the semiconductor memory devices are divided into volatileand non-volatile memory devices. The non-volatile memory devices, whichcan retain data even when the power supply is interrupted, have beenwidely employed. As one kind of the non-volatile memory technology, aSONOS memory structure is to build a silicon nitride layer sandwichedbetween two silicon oxide layers for serving as the charge trappinglayer while the two silicon oxide layers respectively serve as a chargetunnel layer and a charge block layer. This oxide-nitride-oxide (ONO)multilayered structure is disposed on a semiconductor substrate, asilicon floating gate may be disposed on the ONO multilayered structure,and thus a SONOS memory structure is constructed.

Since the microprocessors have become more powerful, requirement tomemory devices of large-capacity and low-cost is raised. To satisfy suchtrend and achieve challenge of high integration in semiconductordevices, memory miniaturization is kept on going, and thus fabricationprocess of memory structure is getting complicated. It is difficult toeffectively enhance the manufacturing yield because of many issuesoccurred correspondingly.

SUMMARY OF THE INVENTION

A semiconductor memory device and a manufacturing method thereof areprovided in the present invention. A semiconductor active structure isformed in a trench penetrating through an isolation layer for avoidingan influence of an edge shape of a shallow trench isolation structureformed in a semiconductor material on a formation of a floating gateelectrode formed subsequently, and the purpose of manufacturing yieldenhancement may be achieved accordingly.

According to an embodiment of the present invention, a semiconductormemory device is provided. The semiconductor memory device includes asubstrate, an isolation layer, a trench, a semiconductor activestructure, and a floating gate electrode. The isolation layer isdisposed on the substrate. The trench penetrates through the isolationlayer and exposes a part of the substrate. The semiconductor activestructure is disposed in the trench. The floating gate electrode isdisposed on the semiconductor active structure.

According to an embodiment of the present invention, a manufacturingmethod of a semiconductor memory device is provided. The manufacturingmethod includes the following steps. An isolation layer is formed on asubstrate. A trench is formed penetrating through the isolation layerand exposing a part of the substrate. A semiconductor active structureis formed in the trench. A floating gate electrode is formed on thesemiconductor active structure.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic drawing illustrating a top view of a semiconductormemory device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional diagram taken along a line A-A′ in FIG. 1 .

FIG. 3 is a schematic drawing illustrating a semiconductor memory deviceaccording to a second embodiment of the present invention.

FIGS. 4-17 are schematic drawings illustrating a manufacturing method ofa semiconductor memory device according to the second embodiment of thepresent invention, wherein FIG. 5 is a schematic drawing in a stepsubsequent to FIG. 4 , FIG. 6 is a cross-sectional diagram taken along aline B-B′ in FIG. 5 , FIG. 7 is a cross-sectional diagram taken along aline C-C′ in FIG. 5 , FIG. 8 is a schematic drawing in a step subsequentto FIG. 7 , FIG. 9 is a schematic drawing in a step subsequent to FIG. 8, FIG. 10 is a cross-sectional diagram taken along a line D-D′ in FIG. 9, FIG. 11 is a schematic drawing in a step subsequent to FIG. 9 , FIG.12 is a cross-sectional diagram taken along a line E-E′ in FIG. 11 ,FIG. 13 is a schematic drawing in a step subsequent to FIG. 12 , FIG. 14is a schematic drawing in a step subsequent to FIG. 13 , FIG. 15 is across-sectional diagram taken along a line F-F′ in FIG. 14 , FIG. 16 isa schematic drawing in a step subsequent to FIG. 14 , and FIG. 17 is aschematic drawing in a step subsequent to FIG. 16 .

FIG. 18 is a schematic drawing illustrating a semiconductor memorydevice according to a third embodiment of the present invention.

FIG. 19 is a schematic drawing illustrating a semiconductor memorydevice according to a fourth embodiment of the present invention.

DETAILED DESCRIPTION

The present invention has been particularly shown and described withrespect to certain embodiments and specific features thereof. Theembodiments set forth herein below are to be taken as illustrativerather than limiting. It should be readily apparent to those of ordinaryskill in the art that various changes and modifications in form anddetail may be made without departing from the spirit and scope of thepresent invention.

Before the further description of the preferred embodiment, the specificterms used throughout the text will be described below.

The terms “on,” “above,” and “over” used herein should be interpreted inthe broadest manner such that “on” not only means “directly on”something but also includes the meaning of “on” something with anintermediate feature or a layer therebetween, and that “above” or “over”not only means the meaning of “above” or “over” something but can alsoinclude the meaning it is “above” or “over” something with nointermediate feature or layer therebetween (i.e., directly onsomething).

The ordinal numbers, such as “first”, “second”, etc., used in thedescription and the claims are used to modify the elements in the claimsand do not themselves imply and represent that the claim has anyprevious ordinal number, do not represent the sequence of some claimedelement and another claimed element, and do not represent the sequenceof the manufacturing methods, unless an addition description isaccompanied. The use of these ordinal numbers is only used to make aclaimed element with a certain name clear from another claimed elementwith the same name.

The term “etch” is used herein to describe the process of patterning amaterial layer so that at least a portion of the material layer afteretching is retained. For example, it is to be understood that the methodof etching silicon involves patterning a photoresist layer over siliconand then removing silicon from the area that is not protected by thephotoresist layer. Thus, after the etching process is complete, thesilicon protected by the area of the photoresist layer will remain. Inanother example, the term “etch” may also refer to a method that doesnot use a photoresist, but leaves at least a portion of the materiallayer after the etch process is complete.

The above description may be used to distinguish between “etching” and“removal”. When “etching” a material layer, at least a portion of thematerial layer is retained after the end of the treatment. In contrast,when the material layer is “removed”, substantially all the materiallayer is removed in the process. However, in some embodiments, “removal”is considered to be a broad term and may include etching.

The term “forming” or the term “disposing” are used hereinafter todescribe the behavior of applying a layer of material to the substrate.Such terms are intended to describe any possible layer formingtechniques including, but not limited to, thermal growth, sputtering,evaporation, chemical vapor deposition, epitaxial growth,electroplating, and the like.

Please refer to FIG. 1 and FIG. 2 . FIG. 1 is a schematic drawingillustrating a top view of a semiconductor memory device 101 accordingto a first embodiment of the present invention, and FIG. 2 is across-sectional diagram taken along a line A-A′ in FIG. 1 . As shown inFIG. 1 and FIG. 2 , the semiconductor memory device 101 includes asubstrate 10, a plurality of isolation structures 20, a plurality offloating gate electrodes FG, a plurality of control gate electrodes CG,a dielectric layer 32, and a memory layer 40. The substrate 10 mayinclude a semiconductor substrate, such as a silicon substrate, anepitaxial silicon substrate, a silicon germanium substrate, a siliconcarbide substrate, a silicon-on-insulator (SOI) substrate, or asemiconductor substrate of other suitable type. The isolation structure20 may be a shallow trench isolation (STI) formed in the substrate 10for defining a plurality of active regions 10A in the substrate 10. Inother words, the active regions 10A may be a part of the substrate 10,and the material composition of the active region 10A is identical tothe material composition of the substrate 10. The shallow trenchisolation described above may be formed by forming a trench in thesubstrate 10 without penetrating through the substrate 10 and fillingthe trench with a single layer or multiple layers of insulation material(such as silicon oxide, silicon nitride, silicon oxynitride, siliconcarbonitride, or other suitable insulation materials), but not limitedthereto. In a top view diagram of the semiconductor memory device 101,each of the isolation structures 20 may be substantially elongated in afirst direction D1, and each of the control gate electrodes CG may besubstantially elongated in a second direction D2 and partly overlap morethan one isolation structure 20 and more than one active region 10A in athickness direction of the substrate 10 (such as a third direction D3shown in FIG. 1 and FIG. 2 ). In some embodiments, the second directionD2 may be substantially perpendicular to the first direction D1, but notlimited thereto. Each of the floating gate electrodes FG may be disposedbetween the control gate electrode CG and the active region 10A andlocated at a region where the control gate electrode CG overlaps theactive region 10A in the third direction D3. The dielectric layer 32 maybe disposed between each floating gate electrode FG and thecorresponding active region 10A, and the memory layer 40 may be disposedbetween the control gate electrode CG and the corresponding floatinggate electrode FG.

In some embodiments, the dielectric layer 32 may include silicon oxide,silicon oxynitride, or other suitable dielectric materials, the floatinggate electrode FG and the control gate electrode CG may respectivelyinclude an electrically conductive material, such as a non-metallicconductive material (such as doped polysilicon), a metallic conductivematerial, or other suitable electrically conductive materials, and thememory layer 40 may include a charge storage structure composed ofmaterial layers, but not limited thereto. For example, in someembodiments, the memory layer 40 may include a first oxide layer 42, anitride layer 44, and a second oxide layer 46 disposed in a stackedconfiguration. The first oxide layer 42 and the second oxide layer 46may respectively include silicon oxide or other suitable oxidematerials, the nitride layer 44 may include silicon nitride or othersuitable nitride materials, and the memory layer 40 may be regarded asan oxide-nitride-oxide (ONO) structure, but not limited thereto.

In some embodiments, a manufacturing method of the floating gateelectrodes FG may include but is not limited to the following steps.Firstly, a top portion of the isolation structure 20 may be higher thanthe active region 10 in the third direction D3 by modifying relatedprocesses. Subsequently, the dielectric layer 32 and an electricallyconductive material used for forming the floating gate electrodes FG maybe formed between the isolation structures 20 adjacent to each of otherand formed on the active regions 10A. The memory layer 40 and anelectrically conductive material used for forming the control gateelectrodes CG may then be formed and a patterning process may beperformed to the electrically conductive material and the memory layer40 for forming the control gate electrodes CG. In some embodiments, theelectrically conductive material used for forming the floating gateelectrodes FG may be patterned to be the floating gate electrodes FGformed between the control gate electrode CG and the active region 10Aby the patterning process mentioned above, but not limited thereto.

However, in some embodiments, the isolation structure 20 may have acurved edge at the end of the isolation structure 20 in the extendingdirection of the isolation structure 20 (such as the first direction D1)because of influence of manufacturing processes, and the shape of thefloating gate electrode FG formed by the patterning process mentionedabove may be influenced by the curved edge of the isolation structure 20when there is an alignment deviation in the patterning process (such asthe control gate electrode CG leaning towards the right side of FIG. 1). Accordingly, the spacing between the adjacent floating gateelectrodes FG may become too small or a short circuit may be generatedbetween the adjacent floating gate electrodes FG. The manufacturingyield of the semiconductor memory device 101 may be influenced by theissues described above, and it will be more difficult to manufacturebecause of the process window of each component will be relativelyreduced as the memory cell of the semiconductor memory device has to becontinuously scaled down in the design.

The following description will detail the different embodiments of thepresent invention. To simplify the description, identical components ineach of the following embodiments are marked with identical symbols. Formaking it easier to understand the differences between the embodiments,the following description will detail the dissimilarities amongdifferent embodiments and the identical features will not be redundantlydescribed.

Please refer to FIG. 3 . FIG. 3 is a schematic drawing illustrating asemiconductor memory device 102 according to a second embodiment of thepresent invention. As shown in FIG. 3 , the semiconductor memory device102 includes the substrate 10, an isolation layer 22, a trench TR, asemiconductor active structure 30, and the floating gate electrode FG.The isolation layer 22 is disposed on the substrate 10. The trench TRpenetrates through the isolation layer 22 and exposes a part of thesubstrate 10. The semiconductor active structure 30 is disposed in thetrench TR. The floating gate electrode FG is disposed on thesemiconductor active structure 30.

In this embodiment, the substrate 10 may include a semiconductorsubstrate, an insulation substrate, or a substrate made of othersuitable materials. The semiconductor active structure 30 is disposed inthe trench TR penetrating through the isolation layer 22 in the thirddirection D3, and the material composition of the semiconductor activestructure 30 may be different from the material composition of substrate10 accordingly. In some embodiments, the semiconductor active structure30 may include a single layer or multiple layers of semiconductormaterials, such as an amorphous silicon semiconductor material, asingle-crystal silicon semiconductor material, a polysiliconsemiconductor material, or other suitable types of semiconductormaterials, and the isolation layer 22 may include a single layer ormultiple layers of insulation materials, such as silicon oxide, siliconnitride, silicon oxynitride, silicon carbonitride, or other suitableinsulation materials.

Additionally, in some embodiments, the semiconductor memory device 101may further include an etching stop layer 21 disposed between theisolation layer 22 and the substrate 10, and the trench TR may furtherpenetrate through the etching stop layer 21. The etching stop layer 21may include nitride (such as silicon nitride) or other suitablematerials different from the material of the isolation layer 22 andhaving required etching selectivity between the material of the etchingstop layer 21 and the material of the isolation layer 22. In someembodiments, the trench TR may be formed by performing an etchingprocess to the isolation layer 22 and the etching stop layer 21, and atop width of the trench TR (such as a width W2 shown in FIG. 3 ) may begreater than a bottom width of the trench TR (such as a width W1 shownin FIG. 3 ) because of being affected by the characteristics of theetching process, but not limited thereto. In some embodiments, the thirddirection D3 described above may be regarded as a thickness direction ofthe substrate 10, and a horizontal direction (such as the firstdirection D1 and the second direction D2) substantially orthogonal tothe third direction D3 may be parallel with a surface of the substrate,but not limited thereto. Additionally, in this description, a distancebetween the substrate 10 and a relatively higher location and/or arelatively higher part in the third direction D3 is greater than adistance between the substrate 10 and a relatively lower location and/ora relatively lower part in the third direction D3. The bottom of eachpart may be closer to the substrate 10 in the third direction D3 thanthe top of this part. Another part disposed above a specific part may beregarded as being relatively far from the substrate 10 in the thirddirection D3, and another part disposed under a specific part may beregarded as being relatively closer to the substrate 10 in the thirddirection D3.

In some embodiments, a top surface of the semiconductor active structure30 (such as a top surface S2 shown in FIG. 3 ) may be lower than a topsurface of the isolation layer 22 (such as a top surface S1 shown inFIG. 3 ) in the thickness direction of the substrate 10 (such as thethird direction D3), and a distance between the top surface S2 of thesemiconductor active structure 30 and the substrate 10 in the thirddirection D3 may be less than a distance between the top surface S1 ofthe isolation layer 22 and the substrate 10 in the third direction D3,but not limited thereto. In addition, the floating gate electrode FG maybe disposed on the semiconductor active structure 30 and at leastpartially located in the trench TR. In some embodiments, thesemiconductor active structure 30 disposed in the trench TR may directlycontact the isolation layer 22 and the etching stop layer 21, and theshape of the semiconductor active structure 30 is influenced by theshape of the trench TR accordingly, but not limited thereto. Forinstance, a top width of the semiconductor active structure 30 (such asa width W shown in FIG. 3 ) may be greater than a bottom width of thesemiconductor active structure 30 (such as the width W1 shown in FIG. 3) also, the top width of the semiconductor active structure 30 may beslightly less than the top width of the trench TR, and the bottom widthof the semiconductor active structure 30 may be substantially equal tothe bottom width of the trench TR, but not limited thereto.

Additionally, in some embodiments, the isolation layer 22 may be dividedinto a plurality of isolation blocks 22P separated from one another bythe trench TR. Each of the isolation blocks 22P may be surrounded by thetrench TR in the horizontal direction (such as the first direction D1and the second direction D2), and a top width of each of the isolationblocks 22P (such as a width W4 shown in FIG. 3 ) may be less than abottom width of each of the isolation blocks 22P (such as a width W3shown in FIG. 3 ). In other words, each of the isolation blocks 22P mayhave a structure with a narrower top and a wider bottom, and thesemiconductor active structure 30 and the trench TR may respectivelyhave a structure with a wider top and a narrower bottom, but not limitedthereto

In some embodiments, the semiconductor memory device 102 may furtherinclude the dielectric layer 32, the memory layer 40, and the controlgate electrode CG. The dielectric layer 32 may be disposed between thefloating gate electrode FG and the semiconductor active structure 30 andmay be at least partially disposed in the trench TR, the memory layer 40may be disposed on the floating gate electrode FG and the dielectriclayer 32, and the control gate electrode CG may be disposed on thememory layer 40. In some embodiments, the dielectric layer 32 may bepartly disposed on the isolation layer 22, and a top surface of thefloating gate electrode FG (such as a top surface S3 shown in FIG. 3 )and a top surface of the dielectric layer 32 (such as a top surface S4shown in FIG. 3 ) may be substantially coplanar, but not limitedthereto. It is worth noting that, in some embodiments, the top surfaceS1, the top surface S2, the top surface S3, and the top surface S4described above may be the topmost surface of the isolation layer 22,the topmost surface of the semiconductor active structure 30, thetopmost surface of the floating gate electrode FG, and the topmostsurface of the dielectric layer 32 in the third direction D3respectively, but not limited thereto. It is worth noting that, in someembodiments, the material composition of the dielectric layer 32 may beidentical to the material composition of the isolation layer 22, thedielectric layer 32 connected with the isolation blocks 22P may bemerged with the isolation blocks 22P, and there will be not any obviousinterface between the dielectric layer 32 and the isolation block 22P.Therefore, the topmost portion of the isolation block 22P (i.e. theportion where the dielectric layer 32 and the isolation block 22P aremerged into one object) may become wider, and each of the isolationblocks 22P may have a structure with a wider top, a wider bottom, and anarrower center, but not limited thereto.

The semiconductor active structure 30 is disposed in the trench TRpenetrating through the isolation layer 22 and the floating gateelectrode FG is disposed on the semiconductor active structure 30 foravoiding the influence of the edge shape of the isolation layer 22 onthe floating gate electrodes FG and the short circuit between theadjacent floating gate electrodes FG. The process window may be improvedand the manufacturing yield may be enhanced accordingly.

Please refer to FIGS. 3-17 . FIGS. 4-17 are schematic drawingsillustrating a manufacturing method of the semiconductor memory device102 in this embodiment, wherein FIG. 5 is a schematic drawing in a stepsubsequent to FIG. 4 , FIG. 6 is a cross-sectional diagram taken along aline B-B′ in FIG. 5 , FIG. 7 is a cross-sectional diagram taken along aline C-C′ in FIG. 5 , FIG. 8 is a schematic drawing in a step subsequentto FIG. 7 , FIG. 9 is a schematic drawing in a step subsequent to FIG. 8, FIG. 10 is a cross-sectional diagram taken along a line D-D′ in FIG. 9, FIG. 11 is a schematic drawing in a step subsequent to FIG. 9 , FIG.12 is a cross-sectional diagram taken along a line E-E′ in FIG. 11 ,FIG. 13 is a schematic drawing in a step subsequent to FIG. 12 , FIG. 14is a schematic drawing in a step subsequent to FIG. 13 , FIG. 15 is across-sectional diagram taken along a line F-F′ in FIG. 14 , FIG. 16 isa schematic drawing in a step subsequent to FIG. 14 , FIG. 17 is aschematic drawing in a step subsequent to FIG. 16 , and FIG. 3 may beregarded as a cross-sectional diagram taken along a line G-G′ in FIG. 17. As shown in FIG. 3 , the manufacturing method of the semiconductormemory device 102 may include the following steps. Firstly, theisolation layer 22 is formed on the substrate 10. The trench TR isformed penetrating through the isolation layer 22 and exposing a part ofthe substrate 10. The semiconductor active structure 30 is formed in thetrench TR. The floating gate electrode FG is formed on the semiconductoractive structure 30.

Specifically, the manufacturing method of the semiconductor memorydevice 102 in this embodiment may include but is not limited to thefollowing steps. As shown in FIGS. 4-7 , the isolation layer 22 may beformed on the substrate 10, and a first patterned mask layer 24 may beformed on the isolation layer 22. Subsequently, a first etching process91 with the first patterned mask layer 24 as an etching mask may beperformed for forming first portions P1 of the trench TR, and the firstpatterned mask layer 24 may be removed after the first etching process91. In some embodiments, the etching stop layer 21 may be formed on thesubstrate 10 before the step of forming the isolation layer 22, and theisolation layer 22 may be formed on the etching stop layer 21accordingly. In addition, the first etching process 91 described abovemay stop at the etching stop layer 21, and the first portions P1 of thetrench TR may penetrate through the isolation layer 22 in the thirddirection D3 without penetrating through the etching stop layer 21 yetafter the first etching process 91 for protecting the substrate 10, butnot limited thereto. As shown in FIGS. 5-7 , the trench TR may include aplurality of the first portions P1, each of the first portions P1 may beelongated in the first direction D1, and the first portions P1 may bedisposed repeatedly in the second direction D2, but not limited thereto.In some embodiments, the first etching process 91 may include a dryetching process or other suitable etching approaches, and a top width ofeach of the first portions P1 (such as the width W2 shown in FIG. 6 )may be greater than a bottom width of each of the first portions P1(such as the width W1 shown in FIG. 6 ) because of the influence of thecharacteristics of the etching process, but not limited thereto.

Subsequently, as shown in FIGS. 8-10 , a second patterned mask layer 26may be formed on the isolation layer 22, and a second etching process 92with the second patterned mask layer 26 as an etching mask may beperformed to the isolation layer 22 and the etching stop layer 21 forforming second portions P2 of the trench TR described above, and thesecond patterned mask layer 26 may be removed after the second etchingprocess 92. In other words, the trench TR may include a plurality of thefirst portions P1 and a plurality of the second portions P2. The firstportions P1 may be formed by the first etching process described above,the second portions P2 may be formed by the second etching process 92,and the second etching process 92 may be performed after the firstetching process. Additionally, in some embodiments, the second etchingprocess 92 may include a dry etching process or other suitable etchingapproaches, and a top width of each of the second portions P2 (such as awidth W6 shown in FIG. 10 ) may be greater than a bottom width of eachof the second portions P2 (such as a width W5 shown in FIG. 10 ) becauseof the influence of the characteristics of the etching process, but notlimited thereto. Additionally, in some embodiments, the second etchingprocess 92 may include a first etching process and a second etchingprocess performed after the first etching process. The first etchingstep may be used to etch the isolation layer 22 for forming the secondportions P2 of the trench TR, and the first etching step may stop at theetching stop layer 21. The second etching step may be used to etch theetching stop layer 21 exposed by the first portions P1 and the secondportions P2 of the trench TR, and the first portions P1 and the secondportions P2 of the trench TR may extend downwardly and penetrate throughthe etching stop layer 21 respectively for exposing a part of thesubstrate 10. In other words, the process condition of the secondetching step may be different from the process condition of the firstetching step for reducing the negative influence of the second etchingprocess 92 on the substrate 10.

As shown in FIG. 9 and FIG. 10 , each of the second portions P2 may beelongated in the second direction D2, the second portions P2 mayintersect the first portions P1, and the first portions P1 and thesecond portions P2 may be connected with one another. Additionally, theisolation layer 22 may be divided into a plurality of the isolationblocks 22P separated from one another by the first portions P1 and thesecond portions P2 of the trench TR, each of the isolation blocks 22Pmay be surrounded by the first portions P1 and the second portions P2 ofthe trench TR in the horizontal direction (such as the first directionD1 and the second direction D2), and a top width of each of theisolation blocks 22P (such as a width W8 shown in FIG. 10 ) may be lessthan a bottom width of each of the isolation blocks 22P (such as a widthW7 shown in FIG. 10 ), but not limited thereto.

Subsequently, as shown in FIG. 11 and FIG. 12 , the semiconductor activestructure 30 may be formed in the trench TR. In some embodiments, thesemiconductor active structure 30 may be formed in the trench TR by adeposition process, an epitaxial growth process, or other suitableapproaches, and the semiconductor active structure 30 may directlycontact the substrate 10 accordingly, but not limited thereto.Additionally, in some embodiments, the top surface S2 of thesemiconductor active structure 30 may be lower than the top surface 51of the isolation layer 22 in the third direction D3 by modifying theprocess condition of the process configured to form the semiconductoractive structure 30 and/or performing an etching back process to thesemiconductor active structure 30, but not limited thereto.

As shown in FIG. 13 , the dielectric layer 32 may be conformally formedon the isolation layer 22 and the semiconductor active structure 30, anda first material layer 34 may be formed on the dielectric layer 32. Thefirst material layer 34 may be used to be patterned to be the floatinggate electrodes described above, and the first material layer 34 mayinclude an electrically conductive material, such as a non-metallicconductive material (such as doped polysilicon), a metallic conductivematerial, or other suitable electrically conductive materials. In someembodiments, the remaining space in the trench TR may be filled with thefirst material layer 34 and a part of the first material layer 34 may beformed outside the trench TR, but not limited thereto. Subsequently, asshown in FIGS. 13-15 , a part of the first material layer 34 may beremoved for exposing a part of the dielectric layer 32 by aplanarization process. The planarization process may include a chemicalmechanical polishing (CMP) process, an etching back process, or othersuitable planarization approaches. In some embodiments, the dielectriclayer 32 may be used as a stop layer in the planarization processdescribed above, and the top surface S4 of the dielectric layer 32 and atop surface S5 of the first material layer 34 may be substantiallycoplanar after the planarization process, but not limited thereto.

As shown in FIG. 16 , the memory layer 40 may be fully formed on thefirst material layer 34 and the dielectric layer 32, and a secondmaterial layer 36 may be formed on the memory layer 40. The secondmaterial layer 36 may be used to be patterned to be the control gateelectrodes described above, and the second material layer 36 may includean electrically conductive material, such as a non-metallic conductivematerial (such as doped polysilicon), a metallic conductive material, orother suitable electrically conductive materials. Subsequently, as shownin FIG. 16 , FIG. 17 , and FIG. 3 , a patterning process 93 may beperformed to the second material layer 36 and the memory layer 40 forforming a plurality of the control gate electrodes CG and the memorylayer 40 underneath the control gate electrodes CG. The patterningprocess 93 may include a photolithography process or other suitablepatterning approaches. Additionally, in some embodiments, the firstmaterial layer 34 may be patterned by the patterning process 93 also forforming the floating gate electrodes FG at the areas where the controlgate electrodes CG overlap the semiconductor active structure 30 in thethird direction D3 and located between the semiconductor activestructure 30 and the control gate electrodes CG, but not limitedthereto.

In the manufacturing method in this embodiment, curved edges are lesslikely to be formed at ends of each of the isolation blocks 22P in theextending direction of the isolation block 22P (such as the firstdirection D1) because the isolation layer 22 may be divided into theisolation blocks 22P by the first portions P1 and the second portions P2with different extending directions in the trench TR, the process windowof the patterning process 93 configured to form the control gateelectrodes CG and the floating gate electrodes FG may be improvedaccordingly, and the manufacturing yield may be enhanced.

Please refer to FIG. 18 . FIG. 18 is a schematic drawing illustrating asemiconductor memory device 103 according to a third embodiment of thepresent invention. As shown in FIG. 18 , the difference between thesemiconductor memory device 103 and the semiconductor memory device inthe second embodiment described above is that the top surface S3 of thefloating gate electrode FG and the top surface S1 of the isolation layer22 in the semiconductor memory device 103 may be substantially coplanar,and the memory layer 40 may directly contact the floating gate electrodeFG, the dielectric layer 32, and the isolation layer 22 accordingly, butnot limited thereto. In the manufacturing method of the semiconductormemory device 103, the dielectric layer 32 located on the top surface S1of the isolation layer 22 may be removed by a planarization processperformed to the first material layer used for forming the floating gateelectrodes FG (such as the condition shown in FIG. 15 ), and the topsurface S3 of the floating gate electrode FG and the top surface S1 ofthe isolation layer 22 accordingly, but not limited thereto. Thethickness of the dielectric layer located between the control gateelectrode CG and the semiconductor active structure 30 may be reduced byremoving the dielectric layer 32 on the isolation layer 22, and thatwill be beneficial to the performance of the semiconductor memory device103.

Please refer to FIG. 19 . FIG. 19 is a schematic drawing illustrating asemiconductor memory device 104 according to a fourth embodiment of thepresent invention. As shown in FIG. 19 , in the semiconductor memorydevice 104, the isolation layer 22 may include a first layer 22A and asecond layer 22B. The second layer 22B may be disposed on the firstlayer 22A, and a material composition of the first layer 22A may bedifferent from a material composition of the second layer 22B. Forexample, the dielectric constant of the second layer 22B may be lowerthan the dielectric constant of the first layer 22A for enhancing theisolation performance at the upper portion of the isolation layer 22,but not limited thereto. In addition, the semiconductor active structure30 may directly contact a sidewall of the first layer 22A of theisolation layer 22, a sidewall of the second layer 22B of the isolationlayer 22, and a sidewall of the etching stop layer 21 because thesemiconductor active structure 30 is formed in the trench TR penetratingthrough the second layer 22B, the first layer 22A, and the etching stoplayer 21, but not limited thereto. It is worth noting that the isolationlayer 22 with a multilayer structure in this embodiment may also beapplied to other embodiments of the present invention according to otherdesign considerations.

To summarize the above descriptions, in the semiconductor memory deviceand the manufacturing method thereof according to the present invention,the semiconductor active structure may be formed in the trenchpenetrating through the isolation layer, the isolation blocks may beformed by dividing the isolation layer with the trench, and the curvededge is less likely to be formed at the end of the isolation block inthe extending direction thereof accordingly.

Therefore, the process window of the patterning process configured toform the control gate electrodes and the floating gate electrodes may beimproved, and the manufacturing yield may be enhanced.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. A manufacturing method of a semiconductor memorydevice, comprising: forming an isolation layer on a substrate; forming atrench penetrating through the isolation layer and exposing a part ofthe substrate; forming a semiconductor active structure in the trench;and forming a floating gate electrode on the semiconductor activestructure.
 2. The manufacturing method of the semiconductor memorydevice according to claim 1, wherein the trench comprises: firstportions, wherein each of the first portions is elongated in a firstdirection; and second portions, where each of the second portions iselongated in a second direction, and the second portions intersect thefirst portions.
 3. The manufacturing method of the semiconductor memorydevice according to claim 2, wherein the first portions are formed by afirst etching process, and the second portions are formed by a secondetching process performed after the first etching process.
 4. Themanufacturing method of the semiconductor memory device according toclaim 2, wherein the isolation layer comprises at least one isolationblock surrounded by the first portions and the second portions of thetrench, and a top width of the at least one isolation block is less thana bottom width of the at least one isolation block.
 5. The manufacturingmethod of the semiconductor memory device according to claim 2, whereina top width of each of the first portions is greater than a bottom widthof each of the first portions.
 6. The manufacturing method of thesemiconductor memory device according to claim 2, wherein a top width ofeach of the second portions is greater than a bottom width of each ofthe second portions.
 7. The manufacturing method of the semiconductormemory device according to claim 1, wherein a top width of thesemiconductor active structure is greater than a bottom width of thesemiconductor active structure.
 8. The manufacturing method of thesemiconductor memory device according to claim 1, wherein a top surfaceof the semiconductor active structure is lower than a top surface of theisolation layer in a thickness direction of the substrate.
 9. Themanufacturing method of the semiconductor memory device according toclaim 1, wherein a top surface of the floating gate electrode and a topsurface of the isolation layer are coplanar.
 10. The manufacturingmethod of the semiconductor memory device according to claim 1, furthercomprising: forming an etching stop layer on the substrate before thestep of forming the isolation layer, wherein the trench furtherpenetrates through the etching stop layer.